Nano and Giga Challenges in Electronics and Photonics From Atoms to Materials to Devices to System Architecture Symposium and Spring School (Tutorial Lectures) Phoenix, Arizona, March 12-16, 2007 |
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Conference Overview
Microelectronics technologies have reached a new stage in their development: the latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufacture at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered. As a marriage of today's micro-, tomorrow's nano- and future molecular electronics this series of conferences on Nano and Giga Challenges in Microelectronics (NGCM) is being launched. Following the first successful forums in Moscow, Russia (NGCM2002) and in Krakow, Poland (NGCM2004) the third meeting will be held in Phoenix, Arizona in 2007 hosted by Arizona State University in cooperation with Nano & Giga Solutions and other local, national and international organizations, Universities, research centers, companies and governmental agencies. GIGAntic challenges for the continuing growth of information technologies beyond the fundamental physical limits in scaling electronic devices to NANO dimension has sparked an unprecedented level of interdisciplinary and international cooperation between industrial and academic researchers, companies - IT market rivals, and countries, including former political and military rivals. The next forum in Phoenix, Arizona, invites academic and industrial researchers to present tutorial, expository and original research papers dedicated to the scientific and advanced technological problems related to the ultimate merge of micro- and nanoelectronics and photonics in specific areas, such as atomic scale materials design: theory and experiment; bio- and molecular electronics and photonics; high frequency electronics; fabrication of nanodevices; magnetic materials and spintronics; materials and processes for integrated and subwave optoelectronics; nanoCMOS: new materials for FETs and other devices; nanoelectronics system architecture; nano optics and lasers; non-silicon materials and devices; quantum effects in devices. Our Sponsors
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