Integrated Circuit Technologies: From Conventional CMOS To The Nanoscale Era

Peter M. ZeitzoffCorresponding Author Contact Information, E-mail The Corresponding Author, a, James A. Hutchbyb, Gennadi Bersukera, Howard R. Huffa

aInternational SEMATECH Inc., 2706 Montopolis Drive, Austin, TX 78741, USA
bSemiconductor Research Corp., P.O. Box 12053, Durham, NC 27709, USA


The development of advanced MOSFETs for future integrated circuit technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal gate electrodes, and perhaps the use of non-classical devices such as multiple-gate MOSFETs in the later stages of the ITRS.

Author Keywords: MOSFET scaling, high-k gate dielectric, non-classical CMOS, FinFET, strained Si on SiGe: enhanced mobility channel.

Corresponding Author Contact InformationCorresponding author.