Integrated Circuit Technologies:
From Conventional CMOS To The Nanoscale Era
Peter M. Zeitzoff,
, a, James A. Hutchbyb, Gennadi Bersukera, Howard R. Huffa
aInternational SEMATECH Inc., 2706 Montopolis Drive, Austin, TX 78741, USA
bSemiconductor Research Corp., P.O. Box 12053, Durham, NC 27709, USA
Peter M. Zeitzoff, , a, James A. Hutchbyb, Gennadi Bersukera, Howard R. Huffa
The development of advanced MOSFETs for future integrated circuit technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal gate electrodes, and perhaps the use of non-classical devices such as multiple-gate MOSFETs in the later stages of the ITRS.
Author Keywords: MOSFET scaling,
high-k gate dielectric,
strained Si on SiGe: enhanced mobility channel.