Modeling of point defect formation in silicon monocrystals

V. A. ZabelinCorresponding Author Contact Information, E-mail The Corresponding Author and V. V. Kalaev

Soft-Impact Ltd., 27 Engels Av., P.O. Box 33, St. Petersburg 194156, Russia

Available online 17 June 2003.


The prediction of characteristics of point defects in silicon crystals is the final goal of numerical simulation of the whole process of growth from the melt, recognized today as a helpful tool in technology optimization. We present an effective numerical model with an accurate description of defect incorporation and evolution in a growing crystal. The model is applied to a 300-mm diameter CZ silicon crystal with an investigation of the sensitivity of the predicted defect characteristics to input parameters.

Author Keywords: Silicon; Point defect; Oxygen precipitate; Defect nucleation

Corresponding Author Contact InformationCorresponding author.