Long-wavelength nitride lasers on GaAs

M. PessaCorresponding Author Contact Information, E-mail The Corresponding Author, C. S. Peng, T. Jouhti, E. -M. Pavelescu, W. Li, S. Karirinne, H. Liu and O. Okhotnikov

Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, 3311, Tampere, Finland

Available online 14 June 2003.


This paper reviews recent studies of structural and optical properties of long wavelength GaInNAs/GaAs quantum well semiconductors and the performance features of GaInNAs/GaAs vertical cavity surface emitting lasers (VCSELs) and edge-emitting lasers. The studies forecast that GaInNAs VCSELs and possibly edge-emitting lasers will become a compliment, or even a replacement, to the now dominant InP-based devices at 1.3-small mu, Greekm short-haul data transmission systems, but whether GaInNAs lasers in general will ever be competitive with the InP lasers at 1.4–1.6 small mu, Greekm is an entirely open issue today. The dilute nitride technology has still some distance to go in addressing its remaining concerns; yet, the authors believe that it is still the best bet to bring about the long-waited breakthrough in the component technology for optical fibre networks.

Author Keywords: Nitride lasers; Vertical cavity surface emitting lasers (VCSELs); Edge-emitting lasers

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