Nano and Giga Challenges in Microelectronics
Symposium and Summer School
Research and Development Opportunities
Cracow, September 13-17, 2004
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Invited speakers

Alexander Alexandrov, Loughborough University, Leicestershire, UK
Current-Control of Instantaneous Molecular Switching
Asen Assenov, University of Glasgow, Glasgow , UK
NanoCMOS Simulation: Every Atom Counts
Anne de Baas, European Commission, Brussels, Belgium
The Research Programs of the European Comission
Valeriu Beiu, Washington State University, Pullman, WA, USA
Practical Redundant Designs for Nano-Architectures: Review of Novel Theoretical and Simulation Results
Jerry Bernholc, North Carolina State University, Raleigh, NC, USA
Atomic Scale Design of Nanostructures
Gennadi Bersuker, SEMATECH International, Austin, TX, USA
Novel Materials for Future Transistor Generations
Andrzej Burian, University of Silesia, Katowice, Poland
Carbon Nanotubes: From the Atomic Structure to Electronic Properties
Franco Cacialli, University College London, London, UK
Top-down and Bottom-up Organic Semiconductors Nanostructures:
Near-Field Lithography and Molecular Self-Organisation
as Enabling Tools for Organic Nanotechnology
Gianfranco Cerofolini, STMicroelectronics, Catania, Italy
Strategies for Nanoelectronics
Bruno Chaudret, Laboratoire de Chimie de Coordination CNRS, Toulouse, France
Organometallic Approach to Magnetic Metal Nanoparticles of Controlled Shape and Organization
Yong Chen, University of California, Los Angeles, CA, USA
Nanoscale Molecular Electronic Circuits
Sorin Cristoloveanu, ENSERG, Grenoble, France
Silicon on Insulator Technologies
Tomasz Dietl, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Ferromagnetic Semiconductors as Spintronic Materials
Jean Fompeyrine, IBM Research, Zurich, Switzerland
Atomic Jewelry: Exploring Epitaxial Technologies for Silicon's Future
Sergey Gaponenko, Institute of Molecular and Atomic Physics Minsk, Belarus
Electrons and Photons in Mesoscopic Structures: Nano-Optics versus Nano-Electronics
Eric Garfunkel, Rutgers University, Piscataway, NJ, USA
Junctions in Molecular and Nano-Electronics
David Gilmer, Freescale Semiconductor, Austin, TX, USA
A Future CMOS Gate Stack: Mining the Periodic Table
Rachel Goldman, University of Michigan, Ann Arbor, MI, USA
Nanometer-Scale Structure and Properties of Dilute Semiconductor Alloys
Torgny Gustafsson, Rutgers University, Piscataway, NJ, USA
Composition and Structure of High-k Materials on Silicon
Tamotsu Hashizume, Hokkaido University, Sapporo, Japan
Surface Control of GaN-based High-frequency and High-power Devices
Kinam Kim, Samsung Electronics, Yongin, Korea
Future Memory Technologies in Nano Era
Krzysztof Kurzydlowski, Warsaw University of Technology, Warsaw, Poland
Nano-Materials Research in Poland
Konstantin Likharev, Stony Brook University, New York, NY, USA
Hybrid Semiconductor/Molecular Integrated Circuits: Prospects and Problems
Karem Maex, IMEC, Lueven, Belgium
Nanotechnology and NanoCMOS
Anand Murthy, Intel, Hillsboro, OR, USA
Transistor Elements for 30nm Physical Gate Lengths and Beyond
Nicholas Rambidi, Moscow State University, Moscow, Russia
Distributed Biomolecular Systems: From Computing to Thinking
Rajesh Rao, Freescale Semiconductor, Austin, TX, USA
Silicon Nanocrystals: Physics and Memory Technology
Fred Roozeboom, Philips Research Labs, Eindhoven, Netherlands
High-density Capacitors for NanoFarads and GigaHertz: Digging Deeper in Porous Si
Federico Rosei, Univérsite du Québec, INRS, Varennes, Canada
Nanostructured Materials: From Quantum Dots to Organic Molecules
Toshiharu Saiki, Keio University, Yokohama, Japan
Nano-Optical Probing of Electron Wave Functions in Quantum Dot Systems
Paul Seidler, IBM Research, Zurich, Switzerland
Nanotechnology and the Information Age
Josef Spalek, Jagiellonian University Cracow, Poland
Selected fundamental aspects of electronic properties of nanosystems
Marek Szymonski, Jagiellonian University Cracow, Poland
Surface Nanostructuring of Semiconductor and Dielectric Materials with Ions, Electrons and Photons
Anna Topol, IBM T.J. Watson Research Center, Yorktown Heights, USA
Contact Scaling for Advanced CMOS
Alexey Toropov, Ioffe Institute, St Petersburg, Russia
Spin Injection in Semiconductor Nanostructures
Tien Tsong, Institute of Physics Academia Sinica, Taipei, Taiwan
Atomic Scale Growth Behavior and Properties of Pb Nanoclusters and Quantum Islands on Si(111) Surfaces
Ronald Wolf, Philips Research Laboratories, Eindhoven, Netherlands
Nanowires - a New Area of Growth for Semiconductors?
Satoshi Yamasaki, Diamond Research Center, AIST, Tsukuba-City, Japan
Atomic Scale Observation of Interface Defect Formation Processes Between Si and SiO2
Alexey Zhukov, Ioffe Institute, St Petersburg, Russia
Lasers Based on Quantum Dots
Elzbieta Zipper, University of Silesia, Katowice, Poland
Persistent Currents in Single- and Multiwall Carbon Nanotubes

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